Elpida Memory's 1 Gigabyte DDR2 Small
Outline-DIMM Provides Unprecedented Memory Speed, High Density and Low Power to Notebook
TOKYO, Japan - February, 2004 - Elpida
Memory, Inc (Elpida), Japan's leading global supplier of Dynamic Random Access Memory
(DRAM), today announced that it has shipped the first 1 Gigabyte DDR2 small-outline dual
in-line memory module (SO-DIMM) that brings low-power, high-density, high-performance and
small form-factor benefits to notebook PC applications. Separately, Elpida has also
shipped samples of its 256 Megabit DDR2 SDRAM device that will be utilized in server and
desktop applications requiring lower density modules. Elpida's extensive DDR2 product line
will be displayed this week at the Intel Developer Forum, February 17-19, 2004.
"DDR2 is by far the most advanced
industry-standard architecture for main memory applications including notebooks, desktops,
workstations and servers," said Jun Kitano, director of Technical Marketing at Elpida
Memory (USA). "Elpida's new 1 Gigabyte SO-DIMM extends DDR2 architecture benefits
such as high-density, high-speed-performance and low power consumption to notebook
applications. Our customers can now select the optimum density device or module for their
next-generation processor-based systems."
Elpida's comprehensive DDR2 product
portfolio now includes devices in 256 Megabit, 512 Megabit and 1 Gigabit densities. In
addition to the new 1 Gigabyte SO-DIMM, Elpida also offers unbuffered modules in 512
Megabyte and 1 Gigabyte densities, and registered modules in 512 Megabyte, 1 Gigabyte and
2 Gigabyte densities. All modules are based on 512 Megabit DDR2 SDRAM devices.
1 Gigabyte DDR2 SO-DIMM Features
Elpida's new 1 Gigabyte SO-DIMMs (Part numbers: EBE11UD8ABDA-5x-E; EBE11UD8ABDA-4x-E) are
composed of sixteen 512 Megabit DDR2 devices stacked and mounted on the modules using
Elpida's innovative stacked FBGA technology (sFBGA). They are organized as 128M words x
64-bits x 2 ranks and offer data transfer rates of up to 533 Megabits per second (Mbps),
and they are JEDEC-standard 200-pin with a 3.8 millimeter (mm) thickness. The mounted DDR2
devices (previously announced in May 2003) are built using Elpida's 0.11 micron process
technology and have a 1.8V operation with a burst length of 4, 8 and a CAS Latency (CL) of
3, 4, 5. The DDR2 devices provide a 50% power savings over the previous generation DDR
architecture, and they incorporate Off-Chip-Driver (OCD) and On-Die Termination (ODT) for
improved signal quality.
256 Megabit DDR2 SDRAM Features
Elpida's new 256 Megabit DDR2 devices (Part numbers: EDE2504AASE-5x/4x-E;
EDE2508AASE-5x/4x-E; EDE2516AASE-5x/4x-E) are organized as 64M/32M/16M words x
4-/8-/16-bits, respectively. The new devices are built using Elpida's 0.11 micron process
technology and operate at up to 533 Megabits per second (Mbps). They are available in 64-
or 84-ball FBGA packages with a CAS Latency (CL) of 3, 4, 5, a burst length of 4, 8 and
low, 1.8V operation. The 256 Megabit devices will form the basis for Elpida's 256 Megabyte
and 512 Megabyte registered DIMMs for servers, as well as for 256 Megabyte SO-DIMMs for
notebooks. The devices can also be used in the growing number of digital consumer products
that are turning to DRAM for its density and performance.
About Elpida Memory, Inc.
Elpida Memory, Inc. is a manufacturer of Dynamic Random Access Memory (DRAM) with
headquarters based in Tokyo, Japan, and sales and marketing operations located in Japan,
North America, Europe and Asia. Elpida offers a broad range of leading-edge DRAM products.
Elpida is a joint venture company formed by NEC and Hitachi on December 20, 1999 and has
been in operation since April 2000.